Dan Fleetwood: CV, February 2008

 

Faculty Office:                                                                        Home:

Vanderbilt University, EECS Dept.                              9142 Saddlebow Drive

PO Box 92, Station B                                                   Brentwood, TN 37027

Nashville, TN 37235                                                   (615) 377-0462

(615) 322-2498 (Fax 615 343-6702)                           E-mail: dmfleet@aol.com

E-mail: dan.fleetwood@vanderbilt.edu

        

 

Education

 

Ph. D., Solid State Physics, Purdue University, West Lafayette, IN, May 1984

            Thesis: Experimental Study of Low-Frequency Excess (1/f) Noise in Metal Films

            Advisor: Nicholas J. Giordano

MS, Experimental Physics, Purdue University, West Lafayette, IN, August 1981

BS with Distinction, Physics (Honors) and Applied Mathematics, Purdue University, West Lafayette, IN

May 1980

 

Employment History

 

Vanderbilt University:

 

Professor of Electrical Engineering (1999-present)

Professor of Physics (2000-present), secondary appointment

Chair of Electrical Engineering and Computer Science Department (2003-present)

~ 31 tenure/tenure-track faculty; ~ 15 administrative staff.

~ 170 graduate students; ~ 225 undergraduate students; two large research institutes with ~ 45 professional research faculty and staff (combined).

EECS research funding increased from ~ $ 9M per year in 2002-2003 to ~ $ 20M per year in 2006-2007; publications increased from 103 in 2003 to 184 in 2006.

Associate Dean for Research ( ˝ time), Vanderbilt University School of Engineering, VUSE (2001-2003)

            ~ 85 tenure/tenure-track faculty.

            VUSE research funding increased from ~ $16.7M in 2001 to ~ $30 M in 2003.

 

Previous Employment:

 

Sandia National Laboratories, Albuquerque, NM, Distinguished/Senior Member of Technical Staff, Radiation Technology & Assurance Dept. (SMTS 1984 - 1989, DMTS 1990 - July 1999).

 

Purdue University, Research Assistant (1981-1984), Tutor (1981-1983), Graduate Teaching Assistant (1980-1981), Undergraduate Teaching Assistant (1978-1980), Physics Department

 

Research Interests

 

Effects of ionizing radiation on microelectronic devices & materials - 23 yrs.

Origin(s) of 1/f noise in semiconductors, semiconductor devices, and metals - 28 yrs.

Development of standard test methods to assess and assure radiation hardness of devices - 20 yrs.

Thermally stimulated current methods to profile defects in insulators - 13 yrs.

Charge trapping in silicon dioxide, and Si/SiO2 interface-trap generation - 23 yrs.

Co-invented and assisted in development of novel protonic nonvolatile memory - 6 yrs.

Novel microelectronic materials, including silicon-on-insulator materials - 21 yrs.

Highly reliable electronics for high-radiation and high-temperature environments - 23 yrs.

 

Selected Honors and Awards

 

Professional Society

 

Fellow, IEEE (M 87, SM 90, Fellow 1997)

Fellow of The American Physical Society, November 2001

 

Outstanding (O)/Meritorious (M) Conference Paper Awards (21): 2002 (O+2M); 2001(M); 1998 (O), 1997(O+2M), 1996(O+M), 1995(O+M), 1994(2M), 1993(M), 1988(O), and 1985(O) IEEE Confs. on Nuclear and Space Radiation Effects; 2004 (M), 1995(O), 1990(O) and 1988(O) Conferences on Hardened Electronics and Radiation Technology. 1995 Outstanding Oral Presentation; 1997 Outstanding Radiation Effects Data Workshop Presentation. Selected out of 80-110 papers, per year, for each conference.

 

Member, Phi Beta Kappa (National Honorary), Sigma Pi Sigma (National Physics Honorary), Phi Kappa Phi (National Honorary)

Member, American Society for Engineering Education, continuous since 2002

 

Other Professional Awards and Honors

 

2007: Purdue University, College of Science, Distinguished Alumni Award

 

2002: Chancellor’s Research Award, for achievement in research and scholarship (with Ron Schrimpf, and Sokrates Pantelides). This was presented for work on 1/f noise and identification of structures for the O vacancy in SiO2.

 

2000: Named one of Top 250 most highly cited researchers in Engineering (1981-1999) by Inst. for Scientific Information

 

Discover Magazine (1998), R&D Magazine “R&D 100” (1997) and Industry Week “Technology of Year” (1997) Awards, for co-invention of protonic nonvolatile field effect transistor memory (patent issued 11/3/1998)

 

1995-1999: Sandia National Labs Awards for Excellence, and Meritorious Achievement Award

1990: Named Distinguished Member of Technical Staff, Sandia National Laboratories

1984: Lark-Horovitz Award, Purdue University, for excellence in graduate research.

1982-1984: David Ross Graduate Fellow, Purdue Univ; 1980-1982: Purdue Univ Graduate Fellow

 

PATENTS:  Dan Fleetwood

 

1.       W. L. Warren (SNL), K. J. R. Vanheusden (Univ. of New Mexico), J. R. Schwank, D. M. Fleetwood, M. R. Shaneyfelt, P. S. Winokur (SNL), and R. A. B. Devine, “Screening Method for Selecting Semiconductor Substrates Having Defects Below a Predetermined Level in an Oxide Layer,” US Patent No. 5,786,231, issued July 28, 1998.

2.       W. L. Warren (SNL), K. J. R. Vanheusden (UNM), R. A. B. Devine (France Telecom), and D. M. Fleetwood (SNL), “Memory Device Using Movement of Protons,” US Patent No. 5,830,575, issued Nov. 3, 1998.  European Patent No. 97942460.3-2108 filed 9/17/97. {1}

3.       W. L. Warren (SNL), K. J. R. Vanheusden (UNM), D. M. Fleetwood (SNL), and R. A. B. Devine (France Telecom), “Memory Device Using Movement of Protons,” US Patent No. 6,140,157, issued Oct. 31, 2000.

4.       W. L. Warren (SNL), K. J. R. Vanheusden (UNM), D. M. Fleetwood (SNL), R. A. B. Devine (France Telecom/CNET), L. B. Archer, G. A. Brown, and R. M. Wallace (Texas Instruments), “Memory Device Using Movement of Protons,” US Patent No. 6,159,829, issued Dec. 12, 2000.

 

 

 

BOOKS AND SPECIAL ISSUES EDITED

 

1.       A. Balandin, F. Danneville, M. J. Deen, and D. M. Fleetwood, Noise in Devices and Circuits III, Vol. 5844, SPIE, The Society for Optical Engineering (SPIE, Bellingham, 2005), 312 pp.

2.       R. D. Schrimpf and D. M. Fleetwood, Radiation Effects and Soft Errors in Integrated Circuits and Electronic Devices (World Scientific, Singapore, 2004), 350 pp.

3.       D. M. Fleetwood and R. Gaillard, Single Event Effects and the Space Radiation Environment, Special Issue: April 1996, IEEE Trans. Nucl. Sci., pp. 341-704 (1996). {2}

 

______________________________________________________________________________

PUBLICATIONS (318 Total – 287 Refereed)

(Number of citations through 2/08 from ISI Web of Science in brackets; total = 4874; h = 39)

 

·         Refereed Journal Articles (253)

 

1.       S. T. Pantelides, Z. Y. Lu, C. Nicklaw, T. Bakos, S. N. Rashkeev, D. M. Fleetwood, and R. D. Schrimpf, “The E' center and oxygen vacancies in SiO2 (VU),” J. Non-Cryst. Solids 354, 217-223 (2008). {0}

2.       L. Tsetseris (Aristotle Univ. of Thessaloniki), X. J. Zhou, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides (VU), “Hydrogen-related instabilities in MOS devices under bias temperature stress,” IEEE Trans. Dev. Mater. Reliab. 7, 502-508 (2007). {0}

3.       K. Akarvardar (Stanford Univ.), R. D. Schrimpf, D. M. Fleetwood (VU), S. Cristoloveanu, P. Gentil (IMEP, Grenoble), and B. J. Blalock (Univ. Tennessee), “Evidence of radiation-induced dopant neutralization in partially-depleted SOI NMOSFETs,” IEEE Trans. Nucl. Sci. 54, 1920-1924 (2007). {0}

4.       S. K. Dixit, X. J. Zhou, R. D. Schrimpf, D. M. Fleetwood, S. T. Pantelides (VU), R. Choi, G. Bersuker (Sematech), and L. C. Feldman (VU), “Radiation induced charge trapping in ultrathin HfO2-based MOSFETs,” IEEE Trans. Nucl. Sci. 54, 1883-1890 (2007). {0}

5.       M. J. Beck, R. Hatcher, R. D. Schrimpf, D. M. Fleetwood, and S. T. Pantelides (VU), “Quantum mechanical description of displacement damage formation,” IEEE Trans. Nucl. Sci. 54, 1906-1912 (2007). {0}

6.       D. K. Chen, F. E. Mamouni, X. J. Zhou, R. D. Schrimpf, D. M. Fleetwood, K. F. Galloway (VU), S. Lee, H. Seo, G. Lucovsky (NC State Univ.), B. Jun, and J. D. Cressler (GA Tech), “Total dose and bias temperature stress effects for HfSiON on Si MOS capacitors,” IEEE Trans. Nucl. Sci. 54, 1931-1937 (2007). {0}

7.       M. Caussanel (University of Perpignan), A. Canals, S. K. Dixit, M. J. Beck (VU), A. D. Touboul (Univ. Montpellier), R. D. Schrimpf, D. M. Fleetwood, and S. T. Pantelides (VU), “Doping-type dependence of damage in silicon diodes exposed to X-ray, proton, and He+ irradiations,” IEEE Trans. Nucl. Sci. 54, 1925-1930 (2007). {0}

8.       P. Cheng, B. Jun, A. Sutton, A. Appaswamy, C. Zhu, J. D. Cressler (GA Tech), R. D. Schrimpf, and D. M. Fleetwood (VU), “Understanding radiation- and hot-carrier-induced damage processes in SiGe HBTs using mixed-mode electrical stress,” IEEE Trans. Nucl. Sci. 54, 1938-1945 (2007). {0}

9.       A. Madan, B. Jun, R. M. Diestelhorst, A. Appaswamy, J. D. Cressler (GA Tech), R. D. Schrimpf, D. M. Fleetwood (VU), P. W. Marshall (NASA GSFC), T. Isaacs-Smith, J. R. Williams (Auburn), and S. J. Koester (IBM), “The radiation tolerance of strained Si/SiGe n-MODFETs,” IEEE Trans. Nucl. Sci. 54, 2251-2256 (2007). {0}

10.    R. M. Diestelhorst, S. Finn, B. Jun, A. K. Sutton, P. Cheng (GA Tech), P. W. Marshall (NASA GSFC), J. D. Cressler (GA Tech), R. D. Schrimpf, D. M. Fleetwood (VU), J. Gustat, B. Heinemann, G. G. Fischer, D. Knoll, and B. Tillack (IHP Microelectronics), “The effects of X-ray and proton irradiation on a 200 GHz/90 GHz complementary (npn + pnp) SiGe:C HBT technology,” IEEE Trans. Nucl. Sci. 54, 2190-2195 (2007). {0}

11.    M. Bellini, B. Jun, A. K. Sutton, A. C. Appaswamy, P. Cheng, J. D. Cressler (GA Tech), P. W. Marshall (NASA GSFC), R. D. Schrimpf, D. M. Fleetwood (VU), B. El-Kareh (consultant), S. Balster, P. Steinmann, and H. Yasuda (Texas Instruments), “The effects of proton and X-ray irradiation on the DC and AC performance of complementary (npn + pnp) SiGe HBTs on thick-film SOI,” IEEE Trans. Nucl. Sci., vol. 54, No. 6, pp. 2245-2250, 2007. {0}

12.    B. Jun, A. K. Sutton, R. M. Diestelhorst, G. J. Duperon, J. D. Cressler (GA Tech), J. D. Black, T. Haeffner, R. A. Reed, M. L. Alles, R. D. Schrimpf, D. M. Fleetwood (VU), and P. W. Marshall (NASA GSFC), “The application of RHBD to nMOSFETs intended for use in cryogenic-temperature radiation environments,” IEEE Trans. Nucl. Sci. 54, 2100-2105 (2007). {0}

13.    A. G. Marinopoulos, I. Batyrev, X. J. Zhou, R. D. Schrimpf, D. M. Fleetwood, and S. T. Pantelides (VU), “Hydrogen shuttling near Hf-defect complexes in Si/SiO2/HfO2 structures,” Appl. Phys. Lett. 91, Article No. 233503 (2007). {0}

14.    X. J. Zhou, D. M. Fleetwood, I. Danciu, A. Dasgupta, S. A. Francis (VU), and A. D. Touboul (Univ. Montpellier), “Effects of aging on the 1/f noise of MOSFETs,” Appl. Phys. Lett. 91, Article No. 173501 (2007). {0}

15.    D. K. Chen, R. D. Schrimpf, D. M. Fleetwood, K. F. Galloway, S. T. Pantelides (VU), A. Dimoulas, G. Mavrou, A. Sotiropoulos, and Y. Panayiotatos (NCSR Demokritos), “Total dose response of Ge MOS capacitors with HfO2/Dy2O3 gate stacks,” IEEE Trans. Nucl. Sci. 54, 971-974 (2007). {0}

16.    J. R. Schwank, F. W. Sexton, M. R. Shaneyfelt (SNL), and D. M. Fleetwood (VU), “Total ionizing dose hardness assurance issues for high dose rate environments,” IEEE Trans. Nucl. Sci. 54, 1042-1048 (2007). {0}

17.    N. H. Tolk, M. L. Alles, R. Pasternak, X. Lu, R. D. Schrimpf, D. M. Fleetwood (VU), R. P. Dolan (IBIS), and R. W. Standley (MEMC), “Oxide-interface studies using second harmonic generation,” Microelectron. Engrg. 84, 2089-2092 (2007). {0}

18.    L. Tsetseris, D. M. Fleetwood, R. D. Schrimpf, X. J. Zhou, I. G. Batyrev, and S. T. Pantelides (VU), “Hydrogen effects in MOS devices,” Microelectron. Engrg. 84, 2344-2349 (2007). {1}

19.    H. D. Xiong, W. Wang, Q. Li, C. A. Richter, J. S. Suehle (NIST), W. K. Hong, T. Lee (Gwangju Inst. Sci. Technol.), and D. M. Fleetwood (VU), “Random telegraph signals in n-type ZnO nanowire field effect transistors at low temperature,” Appl. Phys. Lett. 91, Article No. 053107, pp. 1-3 (2007). Also published in Aug. 13, 2007 issue of Virt. J. Nanoscale Sci. Technol. {0}

20.    M. L. Alles, R. Pasternak, X. Lu, N. H. Tolk, R. D. Schrimpf, D. M. Fleetwood (VU), R. P. Dolan (Ibis Technology), and R. W. Standley (MEMC), “Second harmonic generation for noninvasive metrology of silicon-on-insulator wafers,” IEEE Trans. Semiconductor Manufacturing 20, 107-113 (2007). {0}

21.    D. M. Fleetwood, M. P. Rodgers, L. Tsetseris, X. J. Zhou, I. Batyrev, S. Wang, R. D. Schrimpf, and S. T. Pantelides (VU), “Effects of device aging on microelectronics radiation response and reliability,” Microelectron. Reliab. 47, 1075-1085 (2007). [Invited.] {2}

22.    S. T. Pantelides, L. Tsetseris, S. N. Rashkeev, X. J. Zhou, D. M. Fleetwood, and R. D. Schrimpf (VU), “Hydrogen in MOSFETs – a primary agent of reliability issues,” Microelectron. Reliab. 47, 903-911 (2007). [Invited.] {2}

23.    C. R. Cirba, J. M. Hutson, J. A. Felix, R. D. Schrimpf, and D. M. Fleetwood (VU), “Predicting the long-term total-dose response of SOI MOSFETs,” J. Rad. Effects., Res. and Engrg. 21, No. 1, 194-200 (2007). {NA}

24.    X. J. Zhou, D. M. Fleetwood, L. Tsetseris, R. D. Schrimpf, and S. T. Pantelides (VU), “Effects of switched-bias annealing on charge trapping in HfO2­ gate dielectrics,” IEEE Trans. Nucl. Sci. 53, 3636-3643 (2006). {6}

25.    G. Lucovsky (North Carolina St. Univ), D. M. Fleetwood (VU), S. Lee, H. Seo (NCSU), R. D. Schrimpf (VU), J. A. Felix (Sandia National Labs), J. Luning (Stanford Synchrotron Research Lab), L. B. Fleming, M. Ulrich, and D. E. Aspnes (NCSU), “Differences between charge trapping states in irradiated nano-crystalline HfO2 and non-crystalline Hf silicates,” IEEE Trans. Nucl. Sci. 53, 3644-3648 (2006). {2}

26.    V. Ramachandran, B. Narasimham, D. M. Fleetwood, R. D. Schrimpf, W. T. Holman, A. F. Witulski (VU), R. L. Pease (RLP Research), G. W. Dunham, J. E. Seiler, and D. G. Platteter (NAVSEA Crane), “Modeling total-dose effects for a low-dropout voltage regulator,” IEEE Trans. Nucl. Sci. 53, 3223-3231 (2006). {0}

27.    I. G. Batyrev, M. P. Rodgers, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides (VU), “Effects of water on the aging and radiation response of MOS devices,” IEEE Trans. Nucl. Sci. 53, 3629-3635 (2006). {1}

28.    X. J. Chen, H. J. Barnaby (Univ. Arizona), R. D. Schrimpf, D. M. Fleetwood (VU), R. L. Pease (RLP Research), D. G. Platteter, and G. W. Dunham (NAVSEA Crane), “Nature of interface defect buildup in gated bipolar devices under low dose rate irradiation,” IEEE Trans. Nucl. Sci. 53, 3649-3654 (2006). {0}

29.    M. J. Beck, L. Tsetseris, M. Caussanel, R. D. Schrimpf, D. M. Fleetwood and S. T. Pantelides (VU), “Atomic-scale mechanisms for low-NIEL dopant-type dependent damage in Si,” IEEE Trans. Nucl. Sci. 53, 3621-3628 (2006). {4}

30.    S. K. Dixit, S. Dhar, J. Rozen (VU), S. Wang (Univ. Tulsa), R. D. Schrimpf, D. M. Fleetwood, S. T. Pantelides (VU), J. R. Williams (Auburn Univ), and L. C. Feldman (VU), “Total dose radiation response of nitrided and non-nitrided SiO2/4H-SiC MOS Capacitors,” IEEE Trans. Nucl. Sci. 53, 3687-3692 (2006). {0}

31.    M. Bellini, B. Jun, T. Chen, J. D. Cressler (GA Tech), P. W. Marshall (NASA Goddard), D. Chen, R. D. Schrimpf, D. M. Fleetwood (VU), and J. Cai (IBM), “X-ray irradiation and bias effects in fully-depleted and partially-depleted SiGe HBTs fabricated on CMOS-compatible SOI,” IEEE Trans. Nucl. Sci. 53, 3182-3186 (2006). {1}

32.    B. Jun, R. M. Diestelhorst, M. Bellini, G. Espinel, A. Appaswamy, A. P. Gnana Prakash, J. D. Cressler (GA Tech), D. Chen, R. D. Schrimpf, D. M. Fleetwood (VU), M. Turowski, and A. Raman (CFD Research Corp), “Temperature-dependence of gate-induced drain leakage in X-ray irradiated 130 nm CMOS devices,” IEEE Trans. Nucl. Sci. 53, 3203-3209 (2006). {3}

33.    A. K. Sutton, A. P. Gnana Prakash, B. Jun, E. Zao, M. Bellini (GA Tech), J. Pellish (VU), R. M. Diestelhorst (GA Tech), M. A. Carts, A. M. Phan, R. L. Ladbury (Muniz Eng/NASA), J. D. Cressler (GA Tech), P. W. Marshall, C. J. Marshall (NASA Goddard), R. A. Reed, R. D. Schrimpf, and D. M. Fleetwood (VU), “An investigation of dose enhancement and source dependent effects in 200 GHz SiGe HBTs,” IEEE Trans. Nucl. Sci. 53, 3166-3174 (2006). {1}

34.    Y. V. White, X. Lu, R. Pasternak, N. H. Tolk, A. Chatterjee, R. D. Schrimpf, D. M. Fleetwood (VU), A. Ueda, and R. Mu (Fisk University), “Studies of charge carrier trapping and recombination processes in Si/SiO2/MgO structures using second-harmonic generation,” Appl. Phys. Lett. 88, Article No. 062102, pp. 1-3 (2006). {0}

35.    X. J. Zhou, D. M. Fleetwood (VU), J. A. Felix (SNL), E. P. Gusev, and C. D’Emic (IBM), “Bias-temperature instabilities and radiation effects in MOS devices,” IEEE Trans. Nucl. Sci. 52, 2231-2238 (2005). {9}

36.    M. P. Rodgers, D. M. Fleetwood, R. D. Schrimpf, I. G. Batyrev, S. Wang, and S. T. Pantelides (VU), “The effects of aging on MOS irradiation and annealing response,” IEEE Trans. Nucl. Sci. 52, 2642-2648 (2005). {4}

 

First demonstration of significant changes in MOS irradiation and annealing response after long periods of aging. Effects are larger for non-hermetic storage than hermetic storage. Baking reduces the effect, consistent with moisture absorption leading to excess hydrogen.

 

37.    L. Tsetseris, R. D. Schrimpf, D. M. Fleetwood (VU), R. L. Pease (RLP), and S. T. Pantelides (VU), “Common origin for enhanced low-dose-rate sensitivity and bias temperature instability under negative bias,” IEEE Trans. Nucl. Sci. 52, 2265-2271 (2005). {12}

38.    A. P. Karmarkar (VU), B. D. White (Ohio St.), D. Buttari (UC-Santa Barbara), D. M. Fleetwood, R. D. Schrimpf, R. A. Weller (VU), L. J. Brillson (Ohio St.), and U. K. Mishra (UC-Santa Barbara), “Proton-induced damage in GaN-based Schottky diodes,” IEEE Trans. Nucl. Sci. 52, 2239-2244 (2005). {1}

39.    R. R. Cizmarik, R. D. Schrimpf, D. M. Fleetwood, K. F. Galloway (VU), D. G. Platteter (NAVSEA Crane), M. R. Shaneyfelt (SNL), R. L. Pease (RLP Research), J. Boch (Univ. Nice), D. R. Ball, J. D. Rowe (VU/ISDE), and M. C. Maher (National Semiconductor), “The impact of mechanical stress on the total-dose response of linear bipolar transistors with various passivation layers,” IEEE Trans. Nucl. Sci. 52, No. 5, 1513-1517 (2005). {0}

40.    L. Tsetseris, X. J. Zhou, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides (VU), “Physical mechanisms of negative-bias temperature instability,” Appl. Phys. Lett. 86, 142103-1 to 142103-3 (2005). {25}

 

Demonstrates that NBTI under typical field conditions does not result from Si-H bond breaking. Release of a proton from a dopant complex in Si and subsequent reaction at interface or trapping in oxide is shown to be energetically favorable mechanism.

 

41.    S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides (VU), “Effects of hydrogen motion on interface trap formation and annealing,” IEEE Trans. Nucl. Sci. 51, 3158-3165 (2004). {14}

42.    H. D. Xiong, B. Jun, D. M. Fleetwood, R. D. Schrimpf (VU), and J. R. Schwank (SNL), “Charge trapping and low frequency noise in SOI buried oxides,” IEEE Trans. Nucl. Sci. 51, 3238-3242 (2004). {2}

43.    J. A. Felix, M. R. Shaneyfelt (SNL), D. M. Fleetwood (VU), J. R. Schwank, P. E. Dodd (SNL), E. P. Gusev (IBM), R. M. Fleming (SNL), and C. D’Emic (IBM), “Charge trapping and annealing in high-κ gate dielectrics,” IEEE Trans. Nucl. Sci. 51, 3143-3149 (2004). {4}

44.    R. A. Weller, M. H. Mendenhall, and D. M. Fleetwood (VU), “A screened Coulomb scattering module for displacement damage computations in Geant4,” IEEE Trans. Nucl. Sci. 51, 3669-3678 (2004). {5}

45.    J. W. Stacey, R. D. Schrimpf, D. M. Fleetwood, and K. C. Holmes (VU), “Using surface charge analysis to characterize the radiation response of Si/SiO2 structures,” IEEE Trans. Nucl. Sci. 51, 3686-3691 (2004). {2}

46.    M. R. Shaneyfelt, J. R. Schwank (SNL), D. M. Fleetwood (VU), R. L. Pease (RLP Research), J. A. Felix, P. E. Dodd (SNL), and M. C. Maher (National Semiconductor), “Annealing behavior of linear bipolar devices with enhanced low-dose-rate sensitivity,” IEEE Trans. Nucl. Sci. 51, 3172-3177 (2004). {10}

47.    B. Jun, R. D. Schrimpf, D. M. Fleetwood, Y. V. White, R. Pasternak, S. N. Rashkeev (VU), F. Brunier (SOITEC), N. Bresson (ENSERG), M. Fouillat (IUT Bordeaux), S. Cristoloveanu (SOITEC), and N. H. Tolk (VU), “Charge trapping in irradiated SOI wafers measured by second harmonic generation,” IEEE Trans. Nucl. Sci. 51, 3231-3237 (2004). {5}

48.    A. P. Karmarkar, B. Jun, D. M. Fleetwood, R. D. Schrimpf, R. A. Weller (VU), B. D. White, L. J. Brillson (Ohio St. Univ.), and U. K. Mishra (UC – Santa Barbara), “Proton irradiation effects on GaN-based high electron mobility transistors with Si-doped AlxGa1-xN and thick GaN cap layers,” IEEE Trans. Nucl. Sci. 51, 3801-3806 (2004). {2}

49.    J. Boch (Univ. Nice), F. Saigne, S. Ducret (Univ. Montpellier), R. D. Schrimpf, D. M. Fleetwood (VU), P. Iacconi (Univ. Nice), and L. Dusseau (Univ. Montpellier), “Total dose effects on bipolar integrated circuits: characterization of the saturation region,” IEEE Trans. Nucl. Sci. 51, 3225-3230 (2004). {1}

50.    S. Ducret, F. Saigne (Univ. Montpellier), J. Boch (Univ. Nice), R. D. Schrimpf, D. M. Fleetwood (VU), J. R. Vaille, L. Dusseau (Univ. Montpellier), J. P. David (CERT/ONERA), and R. Ecoffet (CNES), “Effect of thermal annealing on radiation-induced degradation of bipolar technologies when the dose rate is switched from high to low,” IEEE Trans. Nucl. Sci. 51, 3219-3224 (2004). {0}

51.    B. Jun, H. D. Xiong, A. L. Sternberg (VU), C. R. Cirba (Texas Instruments), D. Chen, R. D. Schrimpf, D. M. Fleetwood (VU), J. R. Schwank (SNL), and S. Cristoloveanu (ENSERG), “Total dose effects on double gate fully depleted SOI MOSFETs,” IEEE Trans. Nucl. Sci. 51, 3767-3772 (2004). {5}

52.    L. Tsetseris, X. J. Zhou, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides (VU), “Dual role of fluorine at the Si-SiO2 interface,” Appl. Phys. Lett. 85, 4950-4952 (2004). {9}

53.    B. Jun, Y. V. White, R. D. Schrimpf, D. M. Fleetwood (VU), F. Brunier, N. Bresson (SOITEC), S. Cristoloveanu (IMEP/ENSERG), and N. H. Tolk (VU), “Characterization of multiple Si/SiO2 interfaces in silicon-on-insulator materials via second-harmonic generation,” Appl. Phys. Lett. 85, 3095-3097 (2004). {1}

54.    J. Boch (U. Reims), F. Saigne (U. Montpellier), R. D. Schrimpf, D. M. Fleetwood (VU), S. Ducret, L. Dusseau (U. Montpellier), J. P. David (CERT/ONERA), J. Fesquet, J. Gasiot (U. Montpellier), and R. Ecoffet (CNES), “Effect of switching from high to low dose rate on linear bipolar technology radiation response,” IEEE Trans. Nucl. Sci. 51, No. 5, 2896-2902 (2004). {4}

55.    J. Boch (U. Reims), F. Saigne (U. Montpellier), R. D. Schrimpf, D. M. Fleetwood, R. Cizmarik (VU), and D. Zander (U. Reims), “Elevated temperature irradiation at high dose rate of commercial linear bipolar ICs,” IEEE Trans. Nucl. Sci. 51, 2903-2907 (2004). {1}

56.    H. D. Xiong, D. M. Fleetwood (VU), and J. R. Schwank (SNL), “Low-frequency noise and radiation response of buried oxides in SOI nMOS transistors,” IEE Proc. Circuits, Devices & Systems 151, 118-124 (2004). {1}

57.    X. J. Zhou, L. Tsetseris, S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides (VU), J. A. Felix (SNL), E. P. Gusev, and C. D’Emic (IBM), “Negative bias-temperature instabilities in MOS devices with SiO2 and SiOxNy/HfO2 gate dielectrics,” Appl. Phys. Lett. 84, 4394-4396 (2004). {23}

 

Finds activation energies for oxide and interface trap buildup in thermal SiO2 and high-K dielectrics with oxynitride interfacial layers are approximately 0.3 eV. This activation energy suggests a model based on H+ motion from the Si to the Si/SiO2 interface, followed by lateral transport and reaction or trapping.

 

58.    B. K. Choi, W. P. Kang, J. L. Davidson, M. Howell, R. D. Schrimpf, and D. M. Fleetwood (VU), “CVD diamond photoconductive devices,” Diamond and Related Materials 13, 785-790 (2004). {3}

59.    J. A. Felix, H. D. Xiong, D. M. Fleetwood (VU), E. P. Gusev (IBM), R. D. Schrimpf, A. L. Sternberg (VU), and C. D’Emic (IBM), “Interface trapping properties of nMOSFETs with Al2O3/SiOxNy/Si (100) gate dielectric stacks after exposure to ionizing radiation,” Microelectron. Engrg. 72, 50-54 (2004). {2}

60.    J. A. Felix (VU), J. R. Schwank (SNL), C. R. Cirba, R. D. Schrimpf (VU), M. R. Shaneyfelt (SNL), D. M. Fleetwood (VU), and P. E. Dodd (SNL), “Influence of total-dose radiation on the electrical characteristics of SOI MOSFETs,” Microelectron. Engrg. 72, 332-341 (2004). [Invited.] {2}

61.    J. R. Schwank (SNL), D. M. Fleetwood, H. D. Xiong (VU), M. R. Shaneyfelt, and B. L. Draper (SNL), “Generation of metastable electron traps in the near interfacial region of SOI buried oxides by ion implantation and their effect on device properties,” Microelectron. Engrg. 72, 362-366 (2004). {4}

62.    X. Hu, B. K. Choi (VU), H. J. Barnaby (U. Arizona), D. M. Fleetwood, R. D. Schrimpf, S. C. Lee (VU), S. Shojah-Ardalan, R. Wilkins (Prairie View A&M), U. K. Mishra (UC-Santa Barbara), and R. Dettmer (AFRL), “The Energy Dependence of Proton-Induced Degradation in AlGaN/GaN High Electron Mobility Transistors,” IEEE Trans. Nucl. Sci. 51, 293-297 (2004) [also in RADECS2002 Workshop Proc., pp. 17-20, 2002]. {11}

63.    J. A. Felix (VU), J. R. Schwank (SNL), D. M. Fleetwood (VU), M. R. Shaneyfelt (SNL), and E. P. Gusev (IBM), “Effects of radiation and charge trapping on the reliability of high-κ gate dielectrics,” Microelectron. Reliab. 44, 563-575 (2004). [Invited.] {10}

64.    J. A. Felix (VU), M. R. Shaneyfelt (Sandia National Labs), D. M. Fleetwood (VU), T. L. Meisenheimer, J. R. Schwank (SNL), R. D. Schrimpf (VU), P. E. Dodd (SNL), E. P. Gusev, and C. D’Emic (IBM), “Radiation-induced charge trapping in thin Al2O3/SiOxNy/Si(100) gate dielectric stacks,” IEEE Trans. Nucl. Sci. 50, 1910-1918 (2003). {7}

65.    B. Jun, D. M. Fleetwood, R. D. Schrimpf, X. J. Zhou, E. J. Montes (VU), and S. Cristoloveanu (IMEP/ENSERG), “Charge separation techniques for irradiated pseudo-MOS SOI transistors,” IEEE Trans. Nucl. Sci. 50, 1891-1895 (2003). {3}

66.    S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides (VU), “Statistical modeling of radiation-induced proton transport in Si: deactivation of dopant acceptors in bipolar devices,” IEEE Trans. Nucl. Sci. 50, 1896-1900 (2003). {1}

67.    J. Boch (Univ. Reims), D. M. Fleetwood, R. D. Schrimpf, R. R. Cizmarik (VU), and F. Saigne (Univ. Reims), “Impact of mechanical stress on total-dose effects in bipolar ICs,” IEEE Trans. Nucl. Sci. 50, 2335-2340 (2003). {1}

68.    X. Hu, A. P. Karmarkar, B. Jun, D. M. Fleetwood, R. D. Schrimpf, R. D. Geil, R. A. Weller (VU), B. D. White, M. Bataiev, L. J. Brillson (Ohio St.), and U. K. Mishra (UC – Santa Barbara), “Proton irradiation effects on AlGaN/AlN/GaN high electron mobility transistors,” IEEE Trans. Nucl. Sci. 50, 1791-1796 (2003). {10}

69.    R. A. Weller, A. L. Sternberg, L. W. Massengill, R. D. Schrimpf, and D. M. Fleetwood (VU), “Evaluating average and atypical response in radiation effects simulations,” IEEE Trans. Nucl. Sci. 50, 2265-2271 (2003). {9}

 

Application of GEANT simulations to track and estimate the significance of  individual extreme events associated with high-energy protons in highly scaled sub-micron CMOS devices .

 

70.    B. D. White, M. Bataiev, S. H. Goss (Ohio St. Univ), X. Hu, A. Karmarkar, D. M. Fleetwood, R. D. Schrimpf VU), W. J. Schaff (Cornell Univ), and L. J. Brillson (Ohio St. Univ), “Electrical, spectral, and chemical properties of 1.8 MeV proton irradiated AlGaN/GaN HEMT structures as a function of proton fluence,” IEEE Trans. Nucl. Sci. 50, 1934-1941 (2003). {8}

71.    R. Pasternak, A. Chatterjee, Y. V. Shirovkaya, B. K. Choi, Z. Marka, J. K. Miller, R. G. Albridge, S. N. Rashkeev, S. T. Pantelides, R. D. Schrimpf, D. M. Fleetwood, and N. H. Tolk (VU), “Contactless ultra-fast laser probing of radiation-induced leakage current in ultra-thin oxides,” IEEE Trans. Nucl. Sci. 50, 1929-1933 (2003). {1}

72.    H. D. Xiong, D. M. Fleetwood, J. A. Felix (VU), E. P. Gusev, and C. D’Emic (IBM), “Low-Frequency Noise and Radiation Response of MOS Transistors with Al2O3/SiOxNy/Si (100) Gate Stacks,” Appl. Phys. Lett. 83, 5232-5234 (2003). {4}

73.    S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides (VU), “Radiation-Induced Acceptor Deactivation in Bipolar Devices: Effects of Electric Field,” Appl. Phys. Lett. 83, 4646-4648 (2003). {2}

74.    Y. Jiang, R. Pasternak, Z. Marka, Y. V. Shirovkaya, J. K. Miller, S. N. Rashkeev, Yu. D. Glinka, I. E. Perakis (VU), P. K. Roy (Agere), J. Kozub, B. K. Choi, D. M. Fleetwood, R. D. Schrimpf (VU), X. Liu, Y. Sasaki, J. K. Furdyna (Notre Dame), and N. H. Tolk (VU), “Spin/Carrier Dynamics at Semiconductor Interfaces Using Intense, Tunable Ultra-Fast Lasers,” Phys. Stat. Sol. (b) 240, 490-499 (2003). {0}

75.    R. Pasternak, Y. V. Shirovkaya, Z. Marka, J. K. Miller, S. N. Rashkeev, S. T. Pantelides, N. H. Tolk, B. K. Choi, R. D. Schrimpf, and D. M. Fleetwood (VU), “Laser Detection of Radiation Enhanced Electron Transport in Ultra-Thin Oxides,” Nucl. Instrum. Meth. Phys. Res. A 514, 150-155 (2003). {4}

76.    D. M. Fleetwood and H. A. Eisen, “Total-Dose Radiation Hardness Assurance,” IEEE Trans. Nucl. Sci. 50, 552-564 (2003). [Invited.] {7}

77.    V. A. K. Raparla, S. C. Lee, R. D. Schrimpf, D. M. Fleetwood, and K. F. Galloway (VU), “A Model of Radiation Effects in Nitride-Oxide Films for Power MOSFET Applications,” Solid-St. Electron. 47, 775-783 (2003). {9}

78.    Z. Marka, R. Pasternak, R. G. Albridge, S. N. Rashkeev, S. T. Pantelides, N. H. Tolk, B. K. Choi, D. M. Fleetwood, and R. D. Schrimpf (VU), “Two-Color Optical Technique for Characterization of X-ray Radiation-Enhanced Electron Transport in SiO2,” J. Appl. Phys. 93, 1865-1870 (2003). {3}

79.    Z. Y. Lu, C. J. Nicklaw, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides (VU), “Structure, Properties, and Dynamics of Oxygen Vacancies in Amorphous SiO2,” Phys. Rev. Lett. 89, 285505-1 to 285505-4 (2002). {32}

 

Identifies two different structures for the common Eγ΄ O vacancy defect in SiO2. One has a fourfold coordinated Si, and the other is approximately fivefold coordinated. Density functional theory calculations show that the former can be a stable dipole upon electron capture; the latter cannot.

 

80.    D. M. Fleetwood, H. D. Xiong, Z. Y. Lu, C. J. Nicklaw, J. A. Felix, R. D. Schrimpf, and S. T. Pantelides (VU), “Unified Model of Hole Trapping, 1/f Noise, and Thermally Stimulated Current in MOS Devices, ” IEEE Trans. Nucl. Sci. 49, 2674-2683 (2002). Meritorious Conference Paper Award, 2002 IEEE Nuclear and Space Radiation Effects Conference. {21}

 

Discusses the impact of puckered and dimer O vacancy centers on 1/f noise and thermally stimulated current.

 

81.    H. D. Xiong, D. M. Fleetwood, B. K. Choi, and A. L. Sternberg (VU), “Temperature Dependence and Irradiation Response of 1/f Noise in MOSFETs,” IEEE Trans. Nucl. Sci. 49, 2718-2723 (2002). {8}

  1. J. A. Felix, D. M. Fleetwood, R. D. Schrimpf (VU), J. G. Hong, G. Lucovsky (No. Carolina St. Univ.), J. R. Schwank, and M. R. Shaneyfelt (SNL), “Total Dose Radiation Response of Hafnium Silicate Capacitors,” IEEE Trans. Nucl. Sci. 49, 3191-3196 (2002). {15}
  2. S. N. Rashkeev, C. R. Cirba, D. M. Fleetwood, R. D. Schrimpf (VU), S. C. Witczak (SNL), A. Michez (Univ. Montpellier), and S. T. Pantelides (VU), “Physical Model for Enhanced Interface-Trap Formation at Low Dose Rates,” IEEE Trans. Nucl. Sci. 49, 2650-2655 (2002). Meritorious Conference Paper Award, 2002 IEEE Nuclear and Space Radiation Effects Conference. {31}

 

Provides analytical and numerical models of space-charge effects that cause enhanced low-dose-rate response in linear bipolar transistors.

 

  1. B. K. Choi, D. M. Fleetwood, R. D. Schrimpf, L. W. Massengill, K. F. Galloway (VU), M. R. Shaneyfelt, T. L. Meisenheimer, P. E. Dodd, J. R. Schwank (SNL), Y. M. Lee, R. S. Johnson, and G. Lucovsky (No. Carolina St. Univ.), “Long-Term Reliability Degradation of Ultra-Thin Dielectric Films due to Heavy-Ion Irradiation,” IEEE Trans. Nucl. Sci. 49, 3045-3050 (2002). {11}
  2. C. J. Nicklaw, Z. Y. Lu, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides (VU), “The Structure, Properties, and Dynamics of Oxygen Vacancies in Amorphous SiO2,” IEEE Trans. Nucl. Sci. 49, 2667-2673 (2002). {15}
  3. H. J. Barnaby, S. K. Smith (Univ. of Arizona), R. D. Schrimpf, D. M. Fleetwood (VU), and R. L. Pease (RLP Research), “Analytical Model for Proton Radiation Effects in Bipolar Devices,” IEEE Trans. Nucl. Sci. 49, 2643-2649 (2002). {4}