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Research Group:
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Radiation Effects and
Reliability Group
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Research
Interests:
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Effects of ionizing radiation on microelectronic
devices & materials.
Origin(s) of 1/f noise in semiconductors,
semiconductor devices, and metals.
Thermally stimulated current methods to
profile defects in insulators.
Radiation hardness assurance test
methods.
Charge trapping in silicon dioxide, and interface-trap
generation.
Radiation effects modeling and
simulation.
Novel microelectronic materials,
including silicon-on-insulator materials.
Electronics for high-radiation and
high-temperature environments.
Advanced microelectronic
processing/characterization, including ultrathin oxides & alternative
dielectrics.
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Education:
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Ph. D., Solid
State Physics, Purdue University,
May 1984
M. S., Experimental Physics, Purdue University, August 1981
B. S., Physics and Applied Math, Purdue University, May 1980
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Contact Information:
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Postal
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Vanderbilt
University
VU
Station B #350092
2301
Vanderbilt Place
Nashville,
TN 37235
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Courier
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Vanderbilt
University
400 24th
Ave. S.
Featheringill
Hall, Room 254
Nashville,
TN 37212
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Phone
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(615)
322-2498
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Fax
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(615)
343-6702
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Messages
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Susan
Adams (615) 322-2771
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E-mail
(Vanderbilt)
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dan.fleetwood@vanderbilt.edu
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E-mail
(Home)
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dmfleet@aol.com
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Professional Memberships and Activities:
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Fellow,
IEEE
Fellow,
The American Physical Society
Former
Chair (2005), APS Forum
on Industrial and Applied Physics
Sigma Pi Sigma, Phi Beta Kappa
International
Correspondence Chess GrandMaster
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Honors and Awards:
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IEEE Nuclear and Plasma Sciences Society, Merit
Award, 2009
Purdue University, Distinguished Science
Alumnus, 2007
Discover
Magazine (1998), R&D Magazine R&D
100 (1997) and Industry Week Technology of Year (1997) Awards, for
co-invention of protonic nonvolatile field effect transistor memory (patent
issued 11/3/1998).
More than 20 Outstanding/Meritorious Conference
Paper Awards for IEEE Conferences on Nuclear and Space Radiation Effects
and Conferences on Hardened Electronics and Radiation Technology.
Distinguished Member of the Technical Staff,
Sandia National Laboratories, 1990-1999
Lark-Horovitz Award, Purdue University,
1984.
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Biographical Information
Daniel M. Fleetwood received
his B. S., M. S., and Ph. D. degrees in Physics from Purdue University
in 1980, 1981, and 1984. Dan joined Sandia National Laboratories in Albuquerque, New
Mexico, in 1984, and was named a Distinguished
Member of the Technical Staff in the Radiation Technology and Assurance
Department in 1990. In 1999 he left Sandia to accept the position of
Professor of Electrical Engineering at Vanderbilt
University in Nashville, Tennessee.
In 2000, he was also named a Professor of Physics, in 2001 he was appointed
Associate Dean for Research of the Vanderbilt School of Engineering, and in 2003
he was named Chair of the Electrical Engineering and Computer Science
Department. Dan is the author of more than 335 publications on radiation
effects in microelectronics, ten of which have been recognized with
Outstanding Paper Awards. These papers have been cited more than 5900 times.
In 2009, he received the IEEE Nuclear and Plasma Sciences Society’s Merit
Award. In 1997 Dan received R&D 100 and Industry Week Magazine awards for
co-invention of a new type of computer memory chip based on mobile protons in
SiO2. This chip was also recognized as Discover Magazine’s 1998
Invention of the Year in computer hardware and electronics. Dan is a Fellow
of both the Institute for Electrical and Electronics Engineers and The
American Physical Society, and a member of Phi Beta Kappa and Sigma Pi Sigma.
Dan is one of eight Americans who have earned the International
Correspondence Chess GrandMaster title, played Board 1 for the United States
Correspondence Chess Olympics team in the 15th Olympiad Final (http://www.iccf-webchess.com/), and
recently finished 8th in the 18th International Correspondence
Chess Championship.
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Link to Full CV (March
2009)
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